E-Beam Lithography

The setup is intended for creating an image with topological dimensions of up to 10 nm in the resist layer using a focused electron beam.

Key features and capabilities:

• resolution 10 nm (with a period of 40 nm);
• accelerating voltage of the electron beam from 10 to 50 kV;
• beam current 50 pA - 40 nA;
• minimum address grid 0.5 nm in the field of 500 microns;
• maximum exposure field 500 μm2 with the ability to correct focus in real time;
• the accuracy of cross-linking fields of 25 nm (+ 3σ) in a field of 100 μm and 35 nm (+ 3σ) in a field of 500 μm;
• exposure area 150 x 150 mm;
• automatic or manual assignment of alignment marks (up to 9 marks in each exposure field);
• automatic, semi-automatic or manual tag recognition;
• alignment accuracy of 25 nm (+ 3σ) in a field of 100 μm and 35 nm (+ 3σ) in a field of 500 μm;
• automatic focus correction;
• possibility of beam shape correction during exposure
• the size of the substrates is from 5 to 200 mm.