Integrated membrane-free thermal flow sensor for silicon-on-glass microfluidics
The device has an accuracy at the level of world leaders - no worse than 5% in the range of 0-30 µl / min
Plasma-chemical etching and vapor deposition plant
The plasma chemical etching unit using fluorine gases is equipped with a high-density inductively coupled plasma source.
Designed for plasma-chemical etching of silicon structures, as well as for the following processes:
The gas configuration in this system allows low-temperature <150°C deposition processes of multilayer films with a speed of >8 nm/min, uniformity across the plate <± 5% and tension <250 MPa of the following materials: