Plasma-chemical cleaning and surface activation plants

Installation of plasma-chemical cleaning, removal of resist and etching

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The installation is intended for plasma cleaning of the surface of substrates and plates, to remove thick layers of photoresist and polyimide. The configuration of the system allows you to work in several modes: "hard", providing the greatest speed of removal, and softer with minimal damage to the surface of the plate. Temperature range: from 30 to 250 ° C. The use of this installation allows you to replace toxic liquid cleaning processes with more effective and safe plasma-chemical ones.

The installation provides the following possibilities:

  • removal of photoresist at a speed of 7000 A / min and uniformity over the plate 10%;
  • removal of polyimides and polymer residues after the Bosch process;
  • purification from organic compounds;
  • etching;
  • surface preparation.


Plasma-chemical cleaning and activation unit

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The plant is intended for plasma-chemical preparation of the surface of samples before such processes as the application of photoresist and the deposition of metal layers.

The following processes are possible:

  • metal cleaning (copper, aluminum, gold, silver, stainless steel), plastics (ABS, PA, PE, POM, PP), as well as glass and sapphire;
  • activation of metals, plastics, as well as glass and sapphire;
  • etching of metals and plastics, as well as glass and sapphire.

Processing medium: oxygen or argon.

The size of the processed substrates: up to 100 mm in diameter

Generator frequency: 40 kHz

The installation provides the following processes:

  • removal of photoresist at a speed of 7000 A / min and uniformity over the plate 10%;
  • removal of polyimides and polymer residues after the Bosch process;
  • purification from organic compounds;
  • etching;
  • surface preparation.

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