Facilities
Facilities

Plasma-chemical Etching

Plasma-chemical etching in chlorine-containing gases

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Equipped with inductively coupled plasma source, the plant creates a high plasma density and, as a result, a high flux density of active radicals and ions. 

The installation provides the following etching processes (uniformity across the plate for all processes <± 5%):

  • polycrystalline silicon structures (with a speed > 100 nm / min) with a profile slope >88°;
  • noble metals, such as gold and silver, with a speed of> 100 nm / min and a surface roughness of <5 nm (hot plasma-chemical etching due to heating of the substrate holder to 400° C) with a profile slope >70°;
  • aluminum and silumin at a speed of >200 nm / min and profile slope >88°;
  • titanium and titanium nitride with a speed of> 200 nm / min and a profile slope >88°;

  • platinum with a speed of >70 nm / min and a slope of the profile >65°;
  • nickel with a speed of > 40 nm / min and a slope of the profile >60°;
  • chromium with a speed >15 nm / min and a profile slope >80°;
  • sapphire with a speed of >50 nm / min and a slope of the profile >80°;
  • photoresists, such as PMMA, with a profile slope of 90 ± 1° to create nanoscale structures.

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