Plasma-chemical Etching

Plasma-chemical etching in chlorine-containing gases

Equipped with inductively coupled plasma source, the plant creates a high plasma density and, as a result, a high flux density of active radicals and ions. 

The installation provides the following etching processes (uniformity across the plate for all processes <± 5%):

• polycrystalline silicon structures (with a speed > 100 nm / min) with a profile slope >88°;
• noble metals, such as gold and silver, with a speed of> 100 nm / min and a surface roughness of <5 nm (hot plasma-chemical etching due to heating of the substrate holder to 400° C) with a profile slope >70°;
• aluminum and silumin at a speed of >200 nm / min and profile slope >88°;
• titanium and titanium nitride with a speed of> 200 nm / min and a profile slope >88°;

• platinum with a speed of >70 nm / min and a slope of the profile >65°;
• nickel with a speed of > 40 nm / min and a slope of the profile >60°;
• chromium with a speed >15 nm / min and a profile slope >80°;
• sapphire with a speed of >50 nm / min and a slope of the profile >80°;
• photoresists, such as PMMA, with a profile slope of 90 ± 1° to create nanoscale structures.