New feature in Beilstein Journal of Nanotechnology
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB.
The equivalent noise temperature of the amplifier is below 6K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
Boris I. Ivanov, Dmitri I. Volkhin, Ilya L. Novikov, Dmitri K. Pitsun, Dmitri O. Moskalev, Ilya A. Rodionov, Evgeni Il’ichev and Aleksey G. Vostretsov
Beilstein Journal of Nanotechnology 11, 1484–1491, 2020 (ImF 2.612)